학과 주요 연구 업적 게시판 입니다.
  • Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
  • 조회 수: 2613, 2015-04-28 17:52:33(2015-04-28)
  • 그림1.png


    Prof. Gwan-Hyoung Lee’s group have developed a van der Waals heterostructure device platform where MoS2 layers, 2D semiconductor, are fully encapsulated within hexagonal boron nitride (hBN) and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record high Hall mobility reaching 34,000 cm2/Vs for six-layer MoS2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS2. Lee group also observed Shubnikov–de Haas oscillations in high-mobility monolayer and few-layer MoS2 for the first time. Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2. The van derWaals heterostructure provides

    a standard device platform that enables us to measure the intrinsic electrical transport of two-dimensional materials and achieve high-mobility two-dimensional devices in which to study their unique transport properties and novel quantum physics. This work was reported in of April issue of Nature Nanotechnology.


    Link: http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2015.70.html#supplementary-information

댓글 0