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  • Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory
  • 조회 수: 974, 2016-09-30 17:48:36(2016-09-30)
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    Professor Hyung-Ho Park’s group demonstrate the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a cross-point memory architecture (CPMA) by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler−Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

    link : http://pubs.acs.org/doi/abs/10.1021/acsami.6b03780

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