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  • Direct Transfer Printing with Metal Oxide Layers for Fabricating Flexible Nanowire Devices
  • 조회 수: 1112, 2016-09-30 17:56:29(2016-09-30)
  • 명재민교수님 연구실.jpg


    Prof. Jae-Min Myoung's current research is focusing on the development of direct printing method for fabricating devices by using metal oxide transfer layers. In order to determine a suitable metal oxide for use as transfer layer, the surface energies of various metal oxides are measured, and Au layers deposited on these oxides are transferred onto polyvinylphenol (PVP). Au source–drain electrodes on transfer layers and Si nanowires (NWs) addressed by the dielectrophoretic (DEP) alignment process are transferred onto rigid and flexible PVP-coated substrates. Based on transfer test and DEP process, Al2O3 is determined to be the best transfer layer. Si NWs field effect transistors (FETs) are fabricated on a rigid Si substrate and a flexible polyimide film. Furthermore, the flexible Si NWs FETs fabricated through this process show enhanced electrical properties with an increasing number of bending cycles.


    link : http://onlinelibrary.wiley.com/doi/10.1002/adfm.201503502/full

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